 ምርቶች> ሙሉ የሞገድ ርዝመት> 780nm LED> 770nm Infrared LED 5mm Light emmitting Diode 45-degree

770nm Infrared LED 5mm Light emmitting Diode 45-degree

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የክፍያ ዓይነት: T/T,Paypal,Western Union
ኢንትሮመር: FOB,EXW,FCA
ደቂቃ ትዕዛዝ: 5000 Piece/Pieces
መጓጓዣ: Ocean,Land,Air
ፖርት: SHENZHEN

የአቅርቦት ችሎታ እና ተጨማሪ መረጃዎች

Additional Information

ማሸጊያ: የካርቶን ሳጥን

ምርታማነት: 1000000000 pcs/week

መጓጓዣ: Ocean,Land,Air

መነሻ ቦታ: ቻይና

አቅርቦት ችሎታ: 7000000000 pcs/week

የምስክር ወረቀት: GB/T19001-2008/ISO9001:2008

HS Code: 8541401000

ፖርት: SHENZHEN

የክፍያ ዓይነት: T/T,Paypal,Western Union

ኢንትሮመር: FOB,EXW,FCA

የምርት ባህሪዎች

ሞዴል ቁጥር: 503FIRC-77L/14I100-45A

ብራንድ: ምርጥ LED

ማሸግ እና ማድረስ

የሽያጭ ክፍሎች:	Piece/Pieces
የጥቅል አይነት:	የካርቶን ሳጥን

የኩባንያ ቪድዮ

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2835 SMD LED የመርከብ ጅራት መሻሻል

የምርት ማብራሪያ

- 770nm LED -

503FIRC-77L / 14I100-45A

ለፕሮጀክትዎ አንዳንድ 770nm ኢንፍራሬድ ኤልኢዲ ይፈልጋሉ? ለበለጠ ዝርዝር ያነጋግሩን ፣ ይህ እርስዎ እንዲያሳዝኑ አይፈቅድልዎትም ~ DIP LED (ባለ ሁለት መስመር እሽግ) እንዲሁ በኤሌክትሪክ ቀዳዳ በኩል LED ተብሎም ይጠራል ምክንያቱም ለወረዳው ግንኙነት በ LED ታችኛው ክፍል ላይ ሁለት እርሳሶች አሉ ፡ 770nm የኢንፍራሬድ LEDs በሕክምና ኢንፍራሬድ ሕክምና እና በአንዳንድ የውበት ኢንዱስትሪ ውስጥ በሰፊው ጥቅም ላይ ይውላሉ ፡፡ ነጠላ ቀለም 5 ሚሜ 770nm IR LED በተሻለው የ LED ፋብሪካ ውስጥ ይገኛል ፡፡ እነዚህ 770nm IR LED በ 5 ሚሜ በኩል-በቀዳዳው የኤልዲ መያዣ በጠራ የኢፖክሲ ሌንስ እና ለግንኙነቱ ውስጡ ከፍተኛ ንፁህ የወርቅ ሽቦ የታሸገ ነበር ፡፡ በዚህ ከፍተኛ ጥራት ባለው ጥሬ ዕቃ ይህ IR LED ረዘም ያለ ጊዜን ጠንካራ ሁኔታ አስተማማኝነት እና አነስተኛ የኃይል ፍጆታ ያገኛል ፡፡ እንደምናውቀው ለመምረጥ ቀዳዳ ቀዳዳ በኩል ባለው ኤልዲ ላይ የመመልከቻ ዓይነት አይነቶች ይኖራሉ ፡፡ ከዚህ ሁኔታ ጋር ተመሳሳይ ፣ እነዚህ 770nm IR LED የ 45 ዲግሪ የመመልከቻ አንግል አግኝተዋል ፣ ሌላ የመመልከቻ አንግል እንዲሆን ከፈለጉ ፣ እንደ እርስዎ ፍላጎት ማምረት እንድንችል እኛን ለማነጋገር ነፃነት ይሰማዎት ፡፡

770nm 5mm led

- Size: 5.0*H8.7mm

- Chip Number:1 chip

- Color: 770nm LED

- Type: water clear

- Chip brand: Tyntek

- Different color are available

- Different wavelength are available

- Warranty: 5 Years

- RoHS, REACH, EN62471

- Uniform light output

- Long life-solid state reliability

- Low Power consumption

-Anti UV epoxy resin package

-High temperature resistance

- ቀዳዳ 5 ሚሜ በኩል-ቀዳዳ LED -

5mm infrared LED Size

* አጭር ፒን ካቶድ ነው ፡፡

* 1 ሁሉም ልኬቶች ሚሊሜትር ናቸው; 2. መቻቻል በሌላ መልኩ ካልተጠቀሰ በስተቀር ± 0.10 ሚሜ ነው ፡፡

እኛ ደግሞ 365nm LED ፣ 940nm LED ፣ 850nm LED ፣ ከቀይ እስከ ቀዳዳ LED ፣

ሰማያዊ ባለ-ቀዳዳ ኤል.ዲ. ፣ አረንጓዴ በኩል-ቀዳዳ LED ፣ IR LED ከ 5 ሚሜ የውሃ ማጣሪያ ሌንስ ጋር ፡፡

- ቀዳዳ በኩል LED ጨረር -

770nm IR LED

* በፎቶው ውስጥ ቀለሞች በካሜራ ተወስደዋል ፣ እባክዎን ትክክለኛ አመንጪ ቀለምን እንደ መደበኛ ይያዙ ፡፡

- የኤሌክትሪክ መለኪያዎች -

ፍጹም = ከፍተኛ ደረጃዎች በ Ta = 25 ℃

Parameter

Symbol

Rating

Power Dissipation

Pd

200mw

Pulse Forward Current

IFP

300mA

Forward Current

IF

100mA

Reverse Voltage

VR

5V

Junction Temperature

Tj

115°C

Operating Temperature

Topr

-40 - +80°C

Storage Temperature

Tstg

-40 - +100°C

Soldering Temperature

Tsol

260°C

Electro-Static-Discharge(HBM)

ESD

3000v

Warranty

Time

5 Years

Anti-static bag

Piece

1000Back

1000pcs weight

Bag

0.31g

Pulse Forward Current Condition:Duty 1% and Pulse Width=10us.

Soldering Condition:Soldering condition must be completed with 3 seconds at 260°C

የኦፕቲካል እና የኤሌክትሪክ ባህሪዎች ( T c = 25 ℃ )

Parameter

Symbol

Min

Typ

Max

Unit

Test Condition

Forward Voltage

VF

1.5

1.6

1.8

V

IF=20mA

1.7

1.8

2.1

V

IF=60mA

2.0

2.3

2.5

V

IF=100mA

Luminous Flux

Φ

0.04

lm

IF=20mA

0.1

lm

IF=60mA

0.15

lm

IF=100mA

Luminous Power

PO

15

25

mw

IF=20mA

45

55

mw

IF=60mA

70

90

mw

IF=100mA

Peak Wavelength

λP

760

770

780

nm

IF=20mA

Half Width

Dl

17

nm

IF=20mA

Viewing Half Angle

2q1/2

±22

deg

IF=20mA

Reverse Current

IR

5

uA

VR=5V

Luminous Intensity is measured by ZWL600.

q1/2 is the off-axis angle at which the luminous intensity is half the axial luminous intensity.

*lD is derived from the CIE chromaticity diagram and represents the single wavelength which defines the color of the device.

- ወርቃማ ሽቦ ግንኙነት -

* እያንዳንዱን የኤልዲ ረጅም ዕድሜ ለማቆየት ፣ ቤስት ኤል ኤል ፋብሪካ ለ ‹የወረዳ› ግንኙነት ከፍተኛ ንፁህ የወርቅ ሽቦን ይጠቀማል

- የ LED ማሸጊያ -

5mm led

* ይህንን ኤ.ዲ.ኤን በማንኛውም ቁጥር ፓኬጆች ልንጭነው እና እንደ መስፈርትዎ የኤልዲ ፒኖችን መቅዳት ወይም ማጠፍ እንችላለን ፡፡

- ተዛማጅ IR LED -

- የምርት ሂደት -

LED LAMP

- T hrough-hole IR LED -

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Category: 780nm LED

 ምርቶች> ሙሉ የሞገድ ርዝመት> 780nm LED> 770nm Infrared LED 5mm Light emmitting Diode 45-degree

Parameter	Symbol	Rating
Power Dissipation	Pd	200mw
Pulse Forward Current	IFP	300mA
Forward Current	IF	100mA
Reverse Voltage	VR	5V
Junction Temperature	Tj	115°C
Operating Temperature	Topr	-40 - +80°C
Storage Temperature	Tstg	-40 - +100°C
Soldering Temperature	Tsol	260°C
Electro-Static-Discharge(HBM)	ESD	3000v
Warranty	Time	5 Years
Anti-static bag	Piece	1000Back
1000pcs weight	Bag	0.31g
*Pulse Forward Current Condition:Duty 1% and Pulse Width=10us.
*Soldering Condition:Soldering condition must be completed with 3 seconds at 260°C

Parameter	Symbol	Min	Typ	Max	Unit	Test Condition
Forward Voltage	VF	1.5	1.6	1.8	V	IF=20mA
		1.7	1.8	2.1	V	IF=60mA
		2.0	2.3	2.5	V	IF=100mA
Luminous Flux	Φ		0.04		lm	IF=20mA
			0.1		lm	IF=60mA
			0.15		lm	IF=100mA
Luminous Power	PO	15		25	mw	IF=20mA
		45		55	mw	IF=60mA
		70		90	mw	IF=100mA
Peak Wavelength	λP	760	770	780	nm	IF=20mA
Half Width	Dl		17		nm	IF=20mA
Viewing Half Angle	2q1/2		±22		deg	IF=20mA
Reverse Current	IR			5	uA	VR=5V
*Luminous Intensity is measured by ZWL600.
*q1/2 is the off-axis angle at which the luminous intensity is half the axial luminous intensity.
*lD is derived from the CIE chromaticity diagram and represents the single wavelength which defines the color of the device.